Magnetic and structural properties of Gd-implanted zinc-blende GaN

F. Y. Lo, A. Melnikov, D. Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D. J. As, K. Lischka

研究成果: 雜誌貢獻期刊論文同行評審

34 引文 斯高帕斯(Scopus)


Zinc-blende GaN layers grown by molecular beam epitaxy were uniformly focused-ion-beam implanted with 300 keV Gd3+ ions for doses ranging from 1× 1012 to 1× 1015 cm-2, and their structural and magnetic properties were studied. The implanted samples were not subjected to any annealing treatment. Only Gd incorporation into zinc-blende GaN was observed by x-ray diffraction. Magnetic investigations using superconducting quantum interference device magnetometry reveal a (super)paramagneticlike behavior with an ordering temperature around 60 K for the sample with the highest implantation dose. Our experimental studies indicate that the spontaneous electric polarization in wurtzite GaN is the crucial mechanism for its ferromagneticlike behavior upon Gd doping.

期刊Applied Physics Letters
出版狀態已發佈 - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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