Low-voltage steep turn-on pMOSFET using ferroelectric high-κ gate dielectric

Chun-Hu Cheng, Albert Chin

研究成果: 雜誌貢獻期刊論文同行評審

92 引文 斯高帕斯(Scopus)

摘要

Power consumption is the most difficult challenge for CMOS integrated circuits. Here, we demonstrate experimentally a novel steep turn-on pMOSFET for low-voltage operation for the first time, which exhibits 5-60 mV/decade SS, wide voltage range for SS <60~ mV decade sturdy < 60~ mV decade SS at 85̂ C, faster transistor turn-on at above threshold voltage, and lower off-state leakage by greater than three orders of magnitude. Such improved leakage current is crucial to decrease the off-state leakage current in sub-1X nm CMOS. This was achieved using ferroelectric high-κ ZrHfO gate dielectric pMOSFET.

原文英語
文章編號6693802
頁(從 - 到)274-276
頁數3
期刊IEEE Electron Device Letters
35
發行號2
DOIs
出版狀態已發佈 - 2014 二月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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