Low-voltage InGaZnO thin film transistors with small sub-threshold swing

C. H. Cheng; K. I. Chou; H. H. Hsu

doi:10.1166/jnn.2015.9066

Low-voltage InGaZnO thin film transistors with small sub-threshold swing

C. H. Cheng^*
, K. I. Chou
, H. H. Hsu

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-κ LaAlO₃ gate dielectric. A low V_T of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm²/Vs and low operation voltage of 1.4 V were reached simultaneously in LaAlO₃/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.

原文	英語
頁（從 - 到）	1486-1489
頁數	4
期刊	Journal of Nanoscience and Nanotechnology
卷	15
發行號	2
DOIs	https://doi.org/10.1166/jnn.2015.9066
出版狀態	已發佈 - 2015 1月 1

ASJC Scopus subject areas

生物工程
一般化學
生物醫學工程
一般材料科學
凝聚態物理學

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10.1166/jnn.2015.9066

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title = "Low-voltage InGaZnO thin film transistors with small sub-threshold swing",

abstract = "We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-κ LaAlO3 gate dielectric. A low VT of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm2/Vs and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.",

keywords = "InGaZnO, LaAlO, Sub-threshold swing, Thin film transistor",

author = "Cheng, \{C. H.\} and Chou, \{K. I.\} and Hsu, \{H. H.\}",

year = "2015",

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doi = "10.1166/jnn.2015.9066",

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T1 - Low-voltage InGaZnO thin film transistors with small sub-threshold swing

AU - Cheng, C. H.

AU - Chou, K. I.

AU - Hsu, H. H.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-κ LaAlO3 gate dielectric. A low VT of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm2/Vs and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.

AB - We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-κ LaAlO3 gate dielectric. A low VT of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm2/Vs and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.

KW - InGaZnO

KW - LaAlO

KW - Sub-threshold swing

KW - Thin film transistor

UR - https://www.scopus.com/pages/publications/84920811309

UR - https://www.scopus.com/pages/publications/84920811309#tab=citedBy

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DO - 10.1166/jnn.2015.9066

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SN - 1533-4880

VL - 15

SP - 1486

EP - 1489

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 2

ER -

Low-voltage InGaZnO thin film transistors with small sub-threshold swing

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