摘要
We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-κ LaAlO3 gate dielectric. A low VT of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm2/Vs and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.
原文 | 英語 |
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頁(從 - 到) | 1486-1489 |
頁數 | 4 |
期刊 | Journal of Nanoscience and Nanotechnology |
卷 | 15 |
發行號 | 2 |
DOIs | |
出版狀態 | 已發佈 - 2015 1月 1 |
ASJC Scopus subject areas
- 生物工程
- 一般化學
- 生物醫學工程
- 一般材料科學
- 凝聚態物理學