@article{301b2f3fd6ef4def93cda6d3de98cb15,
title = "Low-threshold-voltage TaN/LaTiO n-MOSFETs with small EOT",
abstract = "In this letter, we report a low threshold voltage (Vt) of 0.12 V in self-aligned gate-first TaN/LaTiO n-MOSFETs, at an equivalent oxide thickness of only 0.63 nm. This was achieved by using Ni-induced solid-phase diffusion of SiO2-covered Ni/Sb that reduced the high-κ dielectric interfacial reactions.",
keywords = "LaTiO, Low V, Solid-phase diffusion (SPD)",
author = "Lin, {S. H.} and Cheng, {C. H.} and Chen, {W. Barn} and Yeh, {F. Syeh} and Albert Chin",
note = "Funding Information: Manuscript received May 15, 2009; revised June 21, 2009. First published August 19, 2009; current version published August 27, 2009. This work was supported in part by the National Science Council of Taiwan under Grant NSC 97-2120-M-009-008. The review of this letter was arranged by Editor M. Ostling.",
year = "2009",
doi = "10.1109/LED.2009.2027723",
language = "English",
volume = "30",
pages = "999--1001",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}