Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure

Chun Hu Cheng, K. I. Chou, Zhi Wei Zheng, Hsiao Hsuan Hsu

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this study, we report a resistive random access memory (RRAM) using trilayer SiOx/a-Si/TiOy film structure. The low switching energy of <10 pJ, highly uniform current distribution (<13% variation), fast 50-ns speed and stable cycling endurance for 106 cycles are simultaneously achieved in this RRAM device. Such good performance can be ascribed to the use of interface-engineered dielectric stack with 1D1R-like structure. The SiOx tunnel barrier in contact with top Ni electrode to form diode-like rectifying element not only lowers self-compliance switching currents, but also improves cycling endurance, which is favorable for the application of high-density 3D memory.

原文英語
頁(從 - 到)139-143
頁數5
期刊Current Applied Physics
14
發行號1
DOIs
出版狀態已發佈 - 2014

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

指紋 深入研究「Low power resistive random access memory using interface-engineered dielectric stack of SiO<sub>x</sub>/a-Si/TiO<sub>y</sub> with 1D1R-like structure」主題。共同形成了獨特的指紋。

引用此