Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance

Chun Hu Cheng; Fon Shan Yeh; Albert Chin

doi:10.1002/adma.201002946

Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance

Chun Hu Cheng, Fon Shan Yeh, Albert Chin^*

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

139 引文斯高帕斯（Scopus）

摘要

Very high performance Ni/GeO_x/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeO_x and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 10⁵ endurance, which are near to the characteristics of existing commercial flash memory.

原文	英語
頁（從 - 到）	902-905
頁數	4
期刊	Advanced Materials
卷	23
發行號	7
DOIs	https://doi.org/10.1002/adma.201002946
出版狀態	已發佈 - 2011 2月 15
對外發佈	是

ASJC Scopus subject areas

一般材料科學
材料力學
機械工業

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10.1002/adma.201002946

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abstract = "Very high performance Ni/GeOx/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeOx and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 105 endurance, which are near to the characteristics of existing commercial flash memory.",

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Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance

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