Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance

Chun Hu Cheng, Fon Shan Yeh, Albert Chin*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

129 引文 斯高帕斯(Scopus)

摘要

Very high performance Ni/GeOx/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeOx and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 105 endurance, which are near to the characteristics of existing commercial flash memory.

原文英語
頁(從 - 到)902-905
頁數4
期刊Advanced Materials
23
發行號7
DOIs
出版狀態已發佈 - 2011 二月 15

ASJC Scopus subject areas

  • 材料科學(全部)
  • 材料力學
  • 機械工業

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