Low operation voltage InGaZnO thin film transistors with LaAlO3 gate dielectric incorporation

Z. W. Zheng, C. H. Cheng, Y. C. Chen

研究成果: 雜誌貢獻文章

12 引文 (Scopus)

摘要

In this paper, we report low operation voltage indium gallium zinc oxide (IGZO) thin film transistors (TFTs) incorporating a high-κ lanthanum aluminum oxide (LaAlO3) as gate dielectric. Good TFT characteristics were achieved simultaneously, including a small subthreshold swing (SS) of 98 mV/dec, a low threshold voltage (Vt) of 0.29 V, a good on-off-state drive current ratio (Ion /Ioff) of 1.1 × 10 5, and field effect mobility (μFE) of 5.4 cm 2/V · sec. These good performances are related to the high gate capacitance density and small equivalent oxide thickness (EOT) provided by the high-κ LaAlO3 dielectric. Moreover, the effects of oxygen partial pressure during IGZO deposition process on the device characteristics were investigated. The small SS and low Vt allow the devices to be used at operation voltage as low as 1.5 V, which shows the great potential for future high speed and low power applications.

原文英語
頁(從 - 到)N179-N181
期刊ECS Journal of Solid State Science and Technology
2
發行號9
DOIs
出版狀態已發佈 - 2013 十一月 15

指紋

Gate dielectrics
Thin film transistors
Zinc Oxide
Gallium
Indium
Zinc oxide
Electric potential
Lanthanum
Oxides
Aluminum Oxide
Threshold voltage
Partial pressure
Oxide films
Capacitance
Ions
Oxygen
Aluminum

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

引用此文

Low operation voltage InGaZnO thin film transistors with LaAlO3 gate dielectric incorporation. / Zheng, Z. W.; Cheng, C. H.; Chen, Y. C.

於: ECS Journal of Solid State Science and Technology, 卷 2, 編號 9, 15.11.2013, p. N179-N181.

研究成果: 雜誌貢獻文章

@article{11942df7d6784583acb807c9cf5415b2,
title = "Low operation voltage InGaZnO thin film transistors with LaAlO3 gate dielectric incorporation",
abstract = "In this paper, we report low operation voltage indium gallium zinc oxide (IGZO) thin film transistors (TFTs) incorporating a high-κ lanthanum aluminum oxide (LaAlO3) as gate dielectric. Good TFT characteristics were achieved simultaneously, including a small subthreshold swing (SS) of 98 mV/dec, a low threshold voltage (Vt) of 0.29 V, a good on-off-state drive current ratio (Ion /Ioff) of 1.1 × 10 5, and field effect mobility (μFE) of 5.4 cm 2/V · sec. These good performances are related to the high gate capacitance density and small equivalent oxide thickness (EOT) provided by the high-κ LaAlO3 dielectric. Moreover, the effects of oxygen partial pressure during IGZO deposition process on the device characteristics were investigated. The small SS and low Vt allow the devices to be used at operation voltage as low as 1.5 V, which shows the great potential for future high speed and low power applications.",
author = "Zheng, {Z. W.} and Cheng, {C. H.} and Chen, {Y. C.}",
year = "2013",
month = "11",
day = "15",
doi = "10.1149/2.020309jss",
language = "English",
volume = "2",
pages = "N179--N181",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "9",

}

TY - JOUR

T1 - Low operation voltage InGaZnO thin film transistors with LaAlO3 gate dielectric incorporation

AU - Zheng, Z. W.

AU - Cheng, C. H.

AU - Chen, Y. C.

PY - 2013/11/15

Y1 - 2013/11/15

N2 - In this paper, we report low operation voltage indium gallium zinc oxide (IGZO) thin film transistors (TFTs) incorporating a high-κ lanthanum aluminum oxide (LaAlO3) as gate dielectric. Good TFT characteristics were achieved simultaneously, including a small subthreshold swing (SS) of 98 mV/dec, a low threshold voltage (Vt) of 0.29 V, a good on-off-state drive current ratio (Ion /Ioff) of 1.1 × 10 5, and field effect mobility (μFE) of 5.4 cm 2/V · sec. These good performances are related to the high gate capacitance density and small equivalent oxide thickness (EOT) provided by the high-κ LaAlO3 dielectric. Moreover, the effects of oxygen partial pressure during IGZO deposition process on the device characteristics were investigated. The small SS and low Vt allow the devices to be used at operation voltage as low as 1.5 V, which shows the great potential for future high speed and low power applications.

AB - In this paper, we report low operation voltage indium gallium zinc oxide (IGZO) thin film transistors (TFTs) incorporating a high-κ lanthanum aluminum oxide (LaAlO3) as gate dielectric. Good TFT characteristics were achieved simultaneously, including a small subthreshold swing (SS) of 98 mV/dec, a low threshold voltage (Vt) of 0.29 V, a good on-off-state drive current ratio (Ion /Ioff) of 1.1 × 10 5, and field effect mobility (μFE) of 5.4 cm 2/V · sec. These good performances are related to the high gate capacitance density and small equivalent oxide thickness (EOT) provided by the high-κ LaAlO3 dielectric. Moreover, the effects of oxygen partial pressure during IGZO deposition process on the device characteristics were investigated. The small SS and low Vt allow the devices to be used at operation voltage as low as 1.5 V, which shows the great potential for future high speed and low power applications.

UR - http://www.scopus.com/inward/record.url?scp=84887339844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887339844&partnerID=8YFLogxK

U2 - 10.1149/2.020309jss

DO - 10.1149/2.020309jss

M3 - Article

AN - SCOPUS:84887339844

VL - 2

SP - N179-N181

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 9

ER -