@article{1ecc88110399473e9ee3fb24662fb04b,
title = "Low-Loss I/O Pad with ESD Protection for K/Ka-Bands Applications in the Nanoscale CMOS Process",
abstract = "The electrostatic discharge (ESD) protection devices are generally designed and employed near the input/output (I/O) pad to avoid the impact of ESD events. The diodes operated under forward-biased condition are widely used as ESD protection devices in integrated circuits. However, the parasitic effects of the ESD protection diodes with large dimension will seriously affect the performance of high-frequency circuits. In order to reduce the signal loss, the parasitic capacitance of ESD protection diodes must be minimized. Therefore, this brief proposed two low-loss I/O pads combined with stacked inductor and ESD protection diodes for K/Ka-bands applications. The traditional and proposed designs of I/O pads with ESD protection have been compared in silicon chip. The measurement results have demonstrated that the proposed structures with sufficient ESD-protection ability can achieve lower signal loss than the traditional design within K/Ka bands.",
keywords = "Dual-diodes, electrostatic discharge (ESD), high-frequency, input/output (I/O) pad, integrated circuits (ICs), K/Ka-bands, low-loss, parasitic capacitance",
author = "Peng, {Bo Wei} and Lin, {Chun Yu}",
note = "Funding Information: Manuscript received June 11, 2018; accepted July 13, 2018. Date of publication July 18, 2018; date of current version September 27, 2018. This work was supported in part by the Ministry of Science and Technology, Taiwan, under Contract MOST 107-2622-E-003-001-CC2 and Contract MOST 106-2221-E-003-033, and in part by the Amazing Microelectronic Corporation, Taiwan. The chip fabrication was supported by National Chip Implementation Center, Taiwan. This brief was recommended by Associate Editor J. M. de la Rosa. (Corresponding author: Chun-Yu Lin.) The authors are with the Department of Electrical Engineering, National Taiwan Normal University, Taipei 106, Taiwan (e-mail: cy.lin@ieee.org). Publisher Copyright: {\textcopyright} 2004-2012 IEEE.",
year = "2018",
month = oct,
doi = "10.1109/TCSII.2018.2857403",
language = "English",
volume = "65",
pages = "1475--1479",
journal = "IEEE Transactions on Circuits and Systems II: Express Briefs",
issn = "1549-7747",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}