@inproceedings{c0eeb016de314d22aa6eb3d0ad87105a,
title = "Low-frequency noise properties of GaN nanowires",
abstract = "We report the temperature (T) dependance (77K to 300K) of the low-frequency electric noise of GaN nanowires. Our results show that these GaN nanowires exhibit the 1/f-like excess noise. A Lorentzian-like feature is observed embedded in the 1/f noise when the applied bias current is large enough. Our four-wire measurement results reveal that the characteristic time τ of the Lorentzian-like noise of the nanowire decreases with T.",
keywords = "1/f noise, GaN, Lorentzian noise, Nanowire",
author = "Li, {L. C.} and Huang, {K. H.} and Suen, {Y. W.} and Hsieh, {W. H.} and Chen, {C. D.} and Lee, {M. W.} and Chen, {C. C.}",
year = "2007",
doi = "10.1063/1.2730098",
language = "English",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "731--732",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}