Low-frequency noise properties of GaN nanowires

L. C. Li, K. H. Huang, Y. W. Suen, W. H. Hsieh, C. D. Chen, M. W. Lee, C. C. Chen

研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)

摘要

We report the temperature (T) dependance (77K to 300K) of the low-frequency electric noise of GaN nanowires. Our results show that these GaN nanowires exhibit the 1/f-like excess noise. A Lorentzian-like feature is observed embedded in the 1/f noise when the applied bias current is large enough. Our four-wire measurement results reveal that the characteristic time τ of the Lorentzian-like noise of the nanowire decreases with T.

原文英語
主出版物標題Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
頁面731-732
頁數2
DOIs
出版狀態已發佈 - 2007 十二月 1
事件28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, 奥地利
持續時間: 2006 七月 242006 七月 28

出版系列

名字AIP Conference Proceedings
893
ISSN(列印)0094-243X
ISSN(電子)1551-7616

其他

其他28th International Conference on the Physics of Semiconductors, ICPS 2006
國家/地區奥地利
城市Vienna
期間2006/07/242006/07/28

ASJC Scopus subject areas

  • 物理與天文學 (全部)

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