Low-frequency noise properties of GaN nanowires

L. C. Li, K. H. Huang, Y. W. Suen, W. H. Hsieh, C. D. Chen, M. W. Lee, C. C. Chen

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

摘要

We report the temperature (T) dependance (77K to 300K) of the low-frequency electric noise of GaN nanowires. Our results show that these GaN nanowires exhibit the 1/f-like excess noise. A Lorentzian-like feature is observed embedded in the 1/f noise when the applied bias current is large enough. Our four-wire measurement results reveal that the characteristic time τ of the Lorentzian-like noise of the nanowire decreases with T.

原文英語
主出版物標題Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
頁面731-732
頁數2
DOIs
出版狀態已發佈 - 2007 十二月 1
事件28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, 奥地利
持續時間: 2006 七月 242006 七月 28

出版系列

名字AIP Conference Proceedings
893
ISSN(列印)0094-243X
ISSN(電子)1551-7616

其他

其他28th International Conference on the Physics of Semiconductors, ICPS 2006
國家奥地利
城市Vienna
期間06/7/2406/7/28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • 引用此

    Li, L. C., Huang, K. H., Suen, Y. W., Hsieh, W. H., Chen, C. D., Lee, M. W., & Chen, C. C. (2007). Low-frequency noise properties of GaN nanowires. 於 Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (頁 731-732). (AIP Conference Proceedings; 卷 893). https://doi.org/10.1063/1.2730098