TY - GEN
T1 - Low-capaeitance SCR with waffle layout structure for on-chip ESD protection in RF ICs
AU - Lin, Chun Yu
AU - Ker, Ming Dou
PY - 2007
Y1 - 2007
N2 - Silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in CMOS technology due to the highest ESD robustness. In this work, the waffle layout structure for SCR can achieve smaller parasitic capacitance under the same ESD robustness. With smaller parasitic capacitance, the degradation on RF circuit performance due to ESD protection device can be reduced. The proposed waffle SCR with low parasitic capacitance is suitable for on-chip ESD protection in RF ICs.
AB - Silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in CMOS technology due to the highest ESD robustness. In this work, the waffle layout structure for SCR can achieve smaller parasitic capacitance under the same ESD robustness. With smaller parasitic capacitance, the degradation on RF circuit performance due to ESD protection device can be reduced. The proposed waffle SCR with low parasitic capacitance is suitable for on-chip ESD protection in RF ICs.
KW - Electrostatic discharges (ESD)
KW - Radio-frequency integrated circuit (RF IC)
KW - Silicon-controlled rectifier (SCR)
UR - http://www.scopus.com/inward/record.url?scp=34748815561&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34748815561&partnerID=8YFLogxK
U2 - 10.1109/RFIC.2007.380991
DO - 10.1109/RFIC.2007.380991
M3 - Conference contribution
AN - SCOPUS:34748815561
SN - 1424405319
SN - 9781424405312
T3 - Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
SP - 749
EP - 752
BT - Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
T2 - 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
Y2 - 3 June 2007 through 5 June 2007
ER -