Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer

C. H. Cheng; P. C. Chen; Y. H. Wu; F. S. Yeh; Albert Chin

doi:10.1109/LED.2011.2168939

Long-endurance nanocrystal TIO₂ resistive memory using a TaON buffer layer

C. H. Cheng
, P. C. Chen
, Y. H. Wu
, F. S. Yeh
, Albert Chin^*

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

34 引文斯高帕斯（Scopus）

摘要

Using nanocrystal (nc) TiO₂ and TaON buffer layer, the Ni/GeO_x/nc-TiO₂/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10¹⁰ cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

原文	英語
文章編號	6058577
頁（從 - 到）	1749-1751
頁數	3
期刊	IEEE Electron Device Letters
卷	32
發行號	12
DOIs	https://doi.org/10.1109/LED.2011.2168939
出版狀態	已發佈 - 2011 12月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/LED.2011.2168939

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引用此

@article{fb7ac33c3c754237bc525a04215feb20,

title = "Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer",

abstract = "Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN\} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.",

keywords = "GeO, Hopping conduction, Resistive random access memory (RRAM), TiO",

author = "Cheng, \{C. H.\} and Chen, \{P. C.\} and Wu, \{Y. H.\} and Yeh, \{F. S.\} and Albert Chin",

note = "Funding Information: The publication of this paper was supported by the National Science Council of Taiwan.",

year = "2011",

month = dec,

doi = "10.1109/LED.2011.2168939",

language = "English",

volume = "32",

pages = "1749--1751",

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AU - Cheng, C. H.

AU - Chen, P. C.

AU - Wu, Y. H.

AU - Yeh, F. S.

AU - Chin, Albert

N1 - Funding Information: The publication of this paper was supported by the National Science Council of Taiwan.

PY - 2011/12

Y1 - 2011/12

N2 - Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

AB - Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN} resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.

KW - GeO

KW - Hopping conduction

KW - Resistive random access memory (RRAM)

KW - TiO

UR - https://www.scopus.com/pages/publications/81855206563

UR - https://www.scopus.com/pages/publications/81855206563#tab=citedBy

U2 - 10.1109/LED.2011.2168939

DO - 10.1109/LED.2011.2168939

M3 - Article

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SN - 0741-3106

VL - 32

SP - 1749

EP - 1751

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 6058577

ER -

Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer

摘要

ASJC Scopus subject areas

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Long-endurance nanocrystal TIO₂ resistive memory using a TaON buffer layer