Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

Chan Shan Yang; Tsung Ta Tang; Ru Pin Pan; Peichen Yu; Ci Ling Pan

doi:10.1063/1.4871255

Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

Chan Shan Yang
, Tsung Ta Tang
, Ru Pin Pan
, Peichen Yu
, Ci Ling Pan^*

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

41 引文斯高帕斯（Scopus）

摘要

Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding π/2 at 1.0 THz was achieved in a ∼517 μm-thick cell. The phase shifter exhibits high transmittance (∼78%). The driving voltage required for quarter-wave operation is as low as 5.66 V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

原文	英語
文章編號	141106
期刊	Applied Physics Letters
卷	104
發行號	14
DOIs	https://doi.org/10.1063/1.4871255
出版狀態	已發佈 - 2014 4月 7
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.4871255

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abstract = "Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding π/2 at 1.0 THz was achieved in a ∼517 μm-thick cell. The phase shifter exhibits high transmittance (∼78\%). The driving voltage required for quarter-wave operation is as low as 5.66 V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.",

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AU - Yang, Chan Shan

AU - Tang, Tsung Ta

AU - Pan, Ru Pin

AU - Yu, Peichen

AU - Pan, Ci Ling

PY - 2014/4/7

Y1 - 2014/4/7

N2 - Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding π/2 at 1.0 THz was achieved in a ∼517 μm-thick cell. The phase shifter exhibits high transmittance (∼78%). The driving voltage required for quarter-wave operation is as low as 5.66 V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

AB - Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding π/2 at 1.0 THz was achieved in a ∼517 μm-thick cell. The phase shifter exhibits high transmittance (∼78%). The driving voltage required for quarter-wave operation is as low as 5.66 V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

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Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

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