Light-emitting polymer space-charge-limited transistor

Chun Yu Chen, Yu Chiang Chao, Hsin Fei Meng, Sheng Fu Horng

    研究成果: 雜誌貢獻文章同行評審

    14 引文 斯高帕斯(Scopus)

    摘要

    Polymer light-emitting transistor is realized by vertically stacking a top-emitting polymer light-emitting diode on a polymer space-charge-limited transistor. The transistor modulates the current flow of the light-emitting diode by the metal-grid base voltage. The active semiconductor of the transistor is poly(3-hexylthiophene). Yellow poly(para-phenylene vinylene) derivative is used as the yellow emitting material. As the cathode is fixed at -12 V and the grid base voltage varies from 0.9 to -0.9 V the light emission is turned on and off with on luminance up to 1208 cd/m2. The current efficiency of the light-emitting transistor is 10 cd/A.

    原文英語
    文章編號223301
    期刊Applied Physics Letters
    93
    發行號22
    DOIs
    出版狀態已發佈 - 2008 十二月 12

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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