Light emission and detection by metal oxide silicon tunneling diodes

C. W. Liu; M. H. Lee; C. F. Lin; I. C. Lin; W. T. Liu; H. H. Lin

Light emission and detection by metal oxide silicon tunneling diodes

C. W. Liu^*, M. H. Lee, C. F. Lin, I. C. Lin, W. T. Liu, H. H. Lin

^*此作品的通信作者

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

31 引文斯高帕斯（Scopus）

摘要

Both NMOS and PMOS light-emitting diodes and photodetectors are demonstrated. For the ultrathin gate oxide, the tunneling gate of metal oxide silicon (MOS) diodes can be utilized as both emitters for light emitting devices and collectors for light detectors. An electron-hole plasma model is used to fit the emission spectra. A surface band bending is responsible for the bandgap reduction in electroluminescence (EL) from the MOS tunneling diode. The dark current of the photodetectors is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000°C) of the oxide can reduce the dark current to a level as low as 3nA/cm².

原文	英語
頁（從 - 到）	749-752
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
出版狀態	已發佈 - 1999
對外發佈	是
事件	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA 持續時間: 1999 12月 5 → 1999 12月 8

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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title = "Light emission and detection by metal oxide silicon tunneling diodes",

abstract = "Both NMOS and PMOS light-emitting diodes and photodetectors are demonstrated. For the ultrathin gate oxide, the tunneling gate of metal oxide silicon (MOS) diodes can be utilized as both emitters for light emitting devices and collectors for light detectors. An electron-hole plasma model is used to fit the emission spectra. A surface band bending is responsible for the bandgap reduction in electroluminescence (EL) from the MOS tunneling diode. The dark current of the photodetectors is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000°C) of the oxide can reduce the dark current to a level as low as 3nA/cm2.",

author = "Liu, {C. W.} and Lee, {M. H.} and Lin, {C. F.} and Lin, {I. C.} and Liu, {W. T.} and Lin, {H. H.}",

year = "1999",

language = "English",

pages = "749--752",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - Light emission and detection by metal oxide silicon tunneling diodes

AU - Liu, C. W.

AU - Lee, M. H.

AU - Lin, C. F.

AU - Lin, I. C.

AU - Liu, W. T.

AU - Lin, H. H.

PY - 1999

Y1 - 1999

N2 - Both NMOS and PMOS light-emitting diodes and photodetectors are demonstrated. For the ultrathin gate oxide, the tunneling gate of metal oxide silicon (MOS) diodes can be utilized as both emitters for light emitting devices and collectors for light detectors. An electron-hole plasma model is used to fit the emission spectra. A surface band bending is responsible for the bandgap reduction in electroluminescence (EL) from the MOS tunneling diode. The dark current of the photodetectors is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000°C) of the oxide can reduce the dark current to a level as low as 3nA/cm2.

AB - Both NMOS and PMOS light-emitting diodes and photodetectors are demonstrated. For the ultrathin gate oxide, the tunneling gate of metal oxide silicon (MOS) diodes can be utilized as both emitters for light emitting devices and collectors for light detectors. An electron-hole plasma model is used to fit the emission spectra. A surface band bending is responsible for the bandgap reduction in electroluminescence (EL) from the MOS tunneling diode. The dark current of the photodetectors is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000°C) of the oxide can reduce the dark current to a level as low as 3nA/cm2.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033315078&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033315078

SN - 0163-1918

SP - 749

EP - 752

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Light emission and detection by metal oxide silicon tunneling diodes

摘要

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