Light emission and detection by metal oxide silicon tunneling diodes

C. W. Liu*, M. H. Lee, C. F. Lin, I. C. Lin, W. T. Liu, H. H. Lin


研究成果: 雜誌貢獻會議論文同行評審

31 引文 斯高帕斯(Scopus)


Both NMOS and PMOS light-emitting diodes and photodetectors are demonstrated. For the ultrathin gate oxide, the tunneling gate of metal oxide silicon (MOS) diodes can be utilized as both emitters for light emitting devices and collectors for light detectors. An electron-hole plasma model is used to fit the emission spectra. A surface band bending is responsible for the bandgap reduction in electroluminescence (EL) from the MOS tunneling diode. The dark current of the photodetectors is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000°C) of the oxide can reduce the dark current to a level as low as 3nA/cm2.

頁(從 - 到)749-752
期刊Technical Digest - International Electron Devices Meeting
出版狀態已發佈 - 1999
事件1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
持續時間: 1999 12月 51999 12月 8

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學


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