Leakage current improvement of Ni/TiNiO/TaN metal-insulator-metal capacitors using optimized N+ plasma treatment and oxygen annealing

C. C. Huang*, C. H. Cheng, Albert Chin, C. P. Chou

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

9 引文 斯高帕斯(Scopus)

摘要

We have investigated the effects of N+ plasma treatment and oxygen annealing on NiTiNiOTaN capacitors. The postdeposition annealing of TiNiO under oxygen ambient increases the capacitance density but trades off the increased leakage current. This leakage current can be largely decreased by applying an optimized N+ plasma treatment. At high capacitance density of 17.1 fFμ m2, a low leakage current of 7.7× 10-6 A cm2 at 1 V is obtained indicating good potential integrated circuit application.

原文英語
頁(從 - 到)H287-H290
期刊Electrochemical and Solid-State Letters
10
發行號10
DOIs
出版狀態已發佈 - 2007 八月 20
對外發佈

ASJC Scopus subject areas

  • 化學工程 (全部)
  • 材料科學(全部)
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程

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