Leakage current conduction behaviors of 0.65 nm equivalent-oxide-thickness HfZrLaO gate dielectrics

K. C. Lin*, J. Y. Chen, H. W. Hsu, H. W. Chen, Chuan-Hsi Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

The high κ gate dielectrics of MOS capacitors with LaO/HfZrO stacked (denoted as HfZrLaO) have been fabricated by atomic-layer-deposited (ALD). In this study, the data show that the gate leakage current density (Jg) is about 1.9 A/cm2, and the equivalent oxide thickness (EOT) is about 0.65 nm with quantum effects taken into account. The analysis of the leakage current conduction characteristics is based on the temperature dependence of the leakage current from 300 to 475 K. The dominant current conduction behaviors are Schottky emission in the region of low electric fields (<1 MV/cm) and high temperatures (450-475 K), Poole-Frankel (P-F) emission in the region of medium electric fields (2.3-3.83 MV/cm) and low temperatures (300-350 K), and Fowler-Nordheim (F-N) tunneling in the region of high electric fields (>4 MV/cm) and low temperatures (<300 K). The electron barrier height (ΦB) at gate interface and the trap energy level (Φt) in the dielectric are extracted to be 1.07 and 1.38 eV, respectively.

原文英語
頁(從 - 到)7-11
頁數5
期刊Solid-State Electronics
77
DOIs
出版狀態已發佈 - 2012 十一月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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