Laser-induced desorption for patterning photo luminance in C₆₀/MoS₂ heterostructure

In this study, C₆₀ coverage was deposited on few-layer MoS₂ flakes, the results of which were analyzed by investigating the morphology and performing Raman spectroscopy and photoluminescence (PL) spectroscopy. The surface roughness of 5 nm C₆₀/MoS₂ was ±1 nm. When the thickness of the C₆₀ was increased to 9–20 nm, the roughness saturated at ±2 nm and did not advance further. The added presence of C₆₀ on MoS₂ did not cause observable changes in the Raman spectra, indicating that the van der Waals contact between C₆₀ and MoS₂ is weak and does not induce noticeable microstructural changes. When the C₆₀ coverage increased, the PL peaks occurred at the C₆₀-dominated 1.69 eV rather than at the original MoS₂-dominated 1.83 eV. Furthermore, continuous wave (CW) laser-induced local desorption was revealed in the C₆₀/MoS₂ heterostructure. A laser power of 10 mW/μm² was sufficient for 20 nm thick C₆₀ to desorb from a MoS₂ flake and could be used to create designed patterns with a resolution of approximately 500 nm. A patterned PL could also be achieved in the C₆₀/MoS₂ through CW laser-induced desorption of C₆₀. This method can be applied in the future fabrication of functional nanodevices combining 0-dimensional and 2-dimensional materials.