Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process

Chun Yu Lin, Shiang Yu Tsai, Li Wei Chu, Ming Dou Ker

研究成果: 雜誌貢獻文章

1 引文 (Scopus)

摘要

The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.

原文英語
文章編號6381493
頁(從 - 到)914-921
頁數8
期刊IEEE Transactions on Microwave Theory and Techniques
61
發行號2
DOIs
出版狀態已發佈 - 2013 一月 1

指紋

circuit protection
Electrostatic discharge
power amplifiers
Power amplifiers
CMOS
electrostatics
Networks (circuits)
radio frequencies
Radio frequency amplifiers
immunity
human body
Capacitance
capacitance
damage
output
Electric potential
electric potential

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process. / Lin, Chun Yu; Tsai, Shiang Yu; Chu, Li Wei; Ker, Ming Dou.

於: IEEE Transactions on Microwave Theory and Techniques, 卷 61, 編號 2, 6381493, 01.01.2013, p. 914-921.

研究成果: 雜誌貢獻文章

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