Large-Swing-Tolerant ESD Protection circuit for gigahertz power amplifier in a 65-nm CMOS Process

Chun Yu Lin, Shiang Yu Tsai, Li Wei Chu, Ming Dou Ker

研究成果: 雜誌貢獻文章同行評審

2 引文 斯高帕斯(Scopus)

摘要

The signal swing at output pad of some radio-frequency (RF) power amplifiers (PAs) may be higher than the supply voltage. To protect the gigahertz large-swing power amplifier from electrostatic discharge (ESD) damage in nanoscale CMOS process, a large-swing-tolerant ESD protection circuit is presented in this paper. The proposed ESD protection circuit had been designed, fabricated, and characterized in a 65-nm CMOS process, where it can achieve low parasitic capacitance, large swing tolerance, high ESD robustness, and good latchup immunity. The proposed ESD protection circuit had been further applied to a 2.4-GHz PA to provide 3-kV human-body-model (HBM) ESD robustness without degrading the RF performances.

原文英語
文章編號6381493
頁(從 - 到)914-921
頁數8
期刊IEEE Transactions on Microwave Theory and Techniques
61
發行號2
DOIs
出版狀態已發佈 - 2013 一月 1

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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