摘要
A method is described for obtaining large quantities of high-purity crystalline GaN nanowires through vapor-liquid-solid (VLS) growth using indium metal as a catalyst. The resulting nanowires have a preferred growth direction. The strong photoluminescence of the nanowires in the UV region suggests possible applications in nanotechnological optoelectronic devices.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 738-741 |
| 頁數 | 4 |
| 期刊 | Advanced Materials |
| 卷 | 12 |
| 發行號 | 10 |
| DOIs | |
| 出版狀態 | 已發佈 - 2000 |
ASJC Scopus subject areas
- 一般材料科學
- 材料力學
- 機械工業
指紋
深入研究「Large-scale catalytic synthesis of crystalline gallium nitride nanowires」主題。共同形成了獨特的指紋。引用此
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