Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors

C. H. Cheng, C. K. Deng, H. H. Hsu, P. C. Chen, B. H. Liou, Albert Chin, F. S. Yeh

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)


We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2 -LaAlO (TLAO) and TiO2 -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m2 with a low leakage current of 1.4× 10-7 A/ cm2 was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors.

頁(從 - 到)H821-H824
期刊Journal of the Electrochemical Society
出版狀態已發佈 - 2010

ASJC Scopus subject areas

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學


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