Lanthanide-oxides mixed TiO2 dielectrics for high-κ MIM capacitors

C. H. Cheng, C. K. Deng, H. H. Hsu, P. C. Chen, B. H. Liou, Albert Chin, F. S. Yeh

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2 -LaAlO (TLAO) and TiO2 -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m2 with a low leakage current of 1.4× 10-7 A/ cm2 was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors.

原文英語
頁(從 - 到)H821-H824
期刊Journal of the Electrochemical Society
157
發行號8
DOIs
出版狀態已發佈 - 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

指紋 深入研究「Lanthanide-oxides mixed TiO<sub>2</sub> dielectrics for high-κ MIM capacitors」主題。共同形成了獨特的指紋。

引用此