We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2 -LaAlO (TLAO) and TiO2 -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m2 with a low leakage current of 1.4× 10-7 A/ cm2 was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors.
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