Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor

Hamed Alsuraisry; Shao Ting Yen; Jeng Han Tsai; Tian Wei Huang

doi:10.1109/TWIOS.2017.7869771

Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor

Hamed Alsuraisry, Shao Ting Yen, Jeng Han Tsai, Tian Wei Huang

研究成果: 書貢獻/報告類型 › 會議論文篇章

6 引文斯高帕斯（Scopus）

摘要

In this paper, two ka-band up-link power amplifiers (PAs) using different technology are designed for satellite communication systems. Using 180-nm CMOS process, two stage common-source (CS) power amplifier attained the small signal gain of 12.6 dB, the peak output power of 13 dBm and power-added efficiency of 25.3%. Using 150-nm GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices, two-stage power amplifier attained the small signal gain of 16.3 dB, the output 1-dB compression power (OP1dB) 26 dBm and the power-added efficiency at OP1dB of 25.7%.

原文	英語
主出版物標題	Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	25-27
頁數	3
ISBN（電子）	9781509034635
DOIs	https://doi.org/10.1109/TWIOS.2017.7869771
出版狀態	已發佈 - 2017 3月 2
對外發佈	是
事件	2017 Topical Workshop on Internet of Space, TWIOS 2017 - Phoenix, 美国持續時間: 2017 1月 15 → 2017 1月 18

出版系列

名字	Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017

其他

其他	2017 Topical Workshop on Internet of Space, TWIOS 2017
國家/地區	美国
城市	Phoenix
期間	2017/01/15 → 2017/01/18

ASJC Scopus subject areas

電腦網路與通信
航空工程
儀器

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10.1109/TWIOS.2017.7869771

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引用此

Alsuraisry, H., Yen, S. T., Tsai, J. H., & Huang, T. W. (2017). Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor. 於 Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017 (頁 25-27). 文章 7869771 (Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TWIOS.2017.7869771

Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor. / Alsuraisry, Hamed; Yen, Shao Ting; Tsai, Jeng Han 等.
Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 25-27 7869771 (Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Alsuraisry, H, Yen, ST, Tsai, JH & Huang, TW 2017, Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor. 於 Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017., 7869771, Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017, Institute of Electrical and Electronics Engineers Inc., 頁 25-27, 2017 Topical Workshop on Internet of Space, TWIOS 2017, Phoenix, 美国, 2017/01/15. https://doi.org/10.1109/TWIOS.2017.7869771

Alsuraisry H, Yen ST, Tsai JH, Huang TW. Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor. 於 Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 25-27. 7869771. (Proceedings of the 2017 Topical Workshop on Internet of Space, TWIOS 2017). doi: 10.1109/TWIOS.2017.7869771

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title = "Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor",

abstract = "In this paper, two ka-band up-link power amplifiers (PAs) using different technology are designed for satellite communication systems. Using 180-nm CMOS process, two stage common-source (CS) power amplifier attained the small signal gain of 12.6 dB, the peak output power of 13 dBm and power-added efficiency of 25.3%. Using 150-nm GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices, two-stage power amplifier attained the small signal gain of 16.3 dB, the output 1-dB compression power (OP1dB) 26 dBm and the power-added efficiency at OP1dB of 25.7%.",

keywords = "CMOS, GaAs, Ka-band, power amplifier (PA), satellite",

author = "Hamed Alsuraisry and Yen, {Shao Ting} and Tsai, {Jeng Han} and Huang, {Tian Wei}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 Topical Workshop on Internet of Space, TWIOS 2017 ; Conference date: 15-01-2017 Through 18-01-2017",

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doi = "10.1109/TWIOS.2017.7869771",

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PY - 2017/3/2

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N2 - In this paper, two ka-band up-link power amplifiers (PAs) using different technology are designed for satellite communication systems. Using 180-nm CMOS process, two stage common-source (CS) power amplifier attained the small signal gain of 12.6 dB, the peak output power of 13 dBm and power-added efficiency of 25.3%. Using 150-nm GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices, two-stage power amplifier attained the small signal gain of 16.3 dB, the output 1-dB compression power (OP1dB) 26 dBm and the power-added efficiency at OP1dB of 25.7%.

AB - In this paper, two ka-band up-link power amplifiers (PAs) using different technology are designed for satellite communication systems. Using 180-nm CMOS process, two stage common-source (CS) power amplifier attained the small signal gain of 12.6 dB, the peak output power of 13 dBm and power-added efficiency of 25.3%. Using 150-nm GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices, two-stage power amplifier attained the small signal gain of 16.3 dB, the output 1-dB compression power (OP1dB) 26 dBm and the power-added efficiency at OP1dB of 25.7%.

KW - CMOS

KW - GaAs

KW - Ka-band

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Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor

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