TY - GEN
T1 - K-band low-noise amplifier with stacked-diode esd protection in nanoscale CMOS technology
AU - Lin, Meng Ting
AU - Lin, Chun Yu
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/10/5
Y1 - 2017/10/5
N2 - An electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power clamp is presented to protect a K-band low-noise-amplifier in nanoscale CMOS process. Experimental results show that the proposed design can achieve higher ESD robustness without degrading the radio-frequency (RF) performance. Based on its good performances during ESD stress and RF circuit operating conditions, the proposed design is very suitable for RF ESD protection.
AB - An electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power clamp is presented to protect a K-band low-noise-amplifier in nanoscale CMOS process. Experimental results show that the proposed design can achieve higher ESD robustness without degrading the radio-frequency (RF) performance. Based on its good performances during ESD stress and RF circuit operating conditions, the proposed design is very suitable for RF ESD protection.
UR - http://www.scopus.com/inward/record.url?scp=85045069905&partnerID=8YFLogxK
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U2 - 10.1109/IPFA.2017.8060074
DO - 10.1109/IPFA.2017.8060074
M3 - Conference contribution
AN - SCOPUS:85045069905
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
SP - 1
EP - 4
BT - 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
Y2 - 4 July 2017 through 7 July 2017
ER -