K-band low-noise amplifier with stacked-diode esd protection in nanoscale CMOS technology

Meng Ting Lin, Chun Yu Lin

研究成果: 書貢獻/報告類型會議論文篇章

3 引文 斯高帕斯(Scopus)

摘要

An electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power clamp is presented to protect a K-band low-noise-amplifier in nanoscale CMOS process. Experimental results show that the proposed design can achieve higher ESD robustness without degrading the radio-frequency (RF) performance. Based on its good performances during ESD stress and RF circuit operating conditions, the proposed design is very suitable for RF ESD protection.

原文英語
主出版物標題24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-4
頁數4
ISBN(電子)9781538617793
DOIs
出版狀態已發佈 - 2017 十月 5
事件24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017 - Chengdu, 中国
持續時間: 2017 七月 42017 七月 7

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2017-July

會議

會議24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2017
國家/地區中国
城市Chengdu
期間2017/07/042017/07/07

ASJC Scopus subject areas

  • 電氣與電子工程

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