Investigations of surface structure for thermally evaporated silicon on a Cu(111) surface

J. S. Tsay*, A. B. Yang, C. N. Wu, F. S. Shiu


研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)


The surface structure and composition of semiconductor/Cu(111) films prepared by thermal evaporation in an ultrahigh vacuum condition have been investigated. As Si atoms were deposited on a Cu(111) surface, diffused sqrt(3) × sqrt(3) R 300 spots were observed up to 2 monolayers while 1 × 1 spots become dimmer as revealed using low-energy electron diffraction technique. Because of a larger electron affinity of Si than that of Cu, the Cu L3M45M45 Auger line shifts to a lower kinetic energy. Annealing treatments at 425 K causes a splitting of the Cu L3M45M45 line. This shows the interdiffusion at the Si/Cu interface and the formation of a Cu-rich surface layer. After annealing treatments, the sqrt(3) × sqrt(3) R 300 domains grow and aggregate to form larger domains as revealed by the decreasing full-width at half maximum of diffraction spots. Ge/Cu(111) shows 1 × 1 structure as annealing up to 500 K. Lack of a dominant structure and a large valence diameter of Ge result in different structures as compared to Si/Cu(111).

頁(從 - 到)8285-8289
期刊Thin Solid Films
出版狀態已發佈 - 2007 八月 15

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學


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