Investigations of surface structure for thermally evaporated silicon on a Cu(111) surface

J. S. Tsay, A. B. Yang, C. N. Wu, F. S. Shiu

研究成果: 雜誌貢獻文章同行評審

3 引文 斯高帕斯(Scopus)

摘要

The surface structure and composition of semiconductor/Cu(111) films prepared by thermal evaporation in an ultrahigh vacuum condition have been investigated. As Si atoms were deposited on a Cu(111) surface, diffused sqrt(3) × sqrt(3) R 300 spots were observed up to 2 monolayers while 1 × 1 spots become dimmer as revealed using low-energy electron diffraction technique. Because of a larger electron affinity of Si than that of Cu, the Cu L3M45M45 Auger line shifts to a lower kinetic energy. Annealing treatments at 425 K causes a splitting of the Cu L3M45M45 line. This shows the interdiffusion at the Si/Cu interface and the formation of a Cu-rich surface layer. After annealing treatments, the sqrt(3) × sqrt(3) R 300 domains grow and aggregate to form larger domains as revealed by the decreasing full-width at half maximum of diffraction spots. Ge/Cu(111) shows 1 × 1 structure as annealing up to 500 K. Lack of a dominant structure and a large valence diameter of Ge result in different structures as compared to Si/Cu(111).

原文英語
頁(從 - 到)8285-8289
頁數5
期刊Thin Solid Films
515
發行號22
DOIs
出版狀態已發佈 - 2007 八月 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

指紋 深入研究「Investigations of surface structure for thermally evaporated silicon on a Cu(111) surface」主題。共同形成了獨特的指紋。

引用此