@article{7a164fa4704242f483e94b1ec8c1d409,
title = "Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides",
abstract = "In this work, we successfully demonstrated the 9.6-nm-thick HfAlOx ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrOx film with zirconium diffusion issue, the HfAlOx film showed excellent thermal stability under high temperature annealing. Besides, the ferroelectric HfAlOx also exhibited robust polarization characteristics under endurance cycling test. A >106 stressed cycles with 4 MV/cm can be measured and a long endurance was sustained over 5 × 107 cycles under 3.6 MV/cm. Therefore, the HfAlOx film showed the great promise for integrating in high performance ferroelectric memory with thermal budget concerns.",
keywords = "Domain pinning, Endurance cycling, Ferroelectric, HfAlO, Thermal stability",
author = "Chang, {Tun Jen} and Chien Liu and Fan, {Chia Chi} and Hsu, {Hsiao Hsuan} and Chen, {Hsuan Han} and Chen, {Wan Hsin} and Fan, {Yu Chi} and Lee, {Tsung Ming} and Lin, {Chien Liang} and Jun Ma and Zheng, {Zhi Wei} and Cheng, {Chun Hu} and Wang, {Shih An} and Chang, {Chun Yen}",
note = "Funding Information: The authors thank the Ministry of Science and Technology, R.O.C., for funding this research through grant MOST NSC 106-2628-E-003 -001 -MY2. Funding Information: The authors thank the Ministry of Science and Technology, R.O.C. , for funding this research through grant MOST NSC 106-2628-E-003 -001 -MY2 . Publisher Copyright: {\textcopyright} 2019",
year = "2019",
month = aug,
doi = "10.1016/j.vacuum.2019.04.045",
language = "English",
volume = "166",
pages = "11--14",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
}