Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

Tun Jen Chang; Chien Liu; Chia Chi Fan; Hsiao Hsuan Hsu; Hsuan Han Chen; Wan Hsin Chen; Yu Chi Fan; Tsung Ming Lee; Chien Liang Lin; Jun Ma; Zhi Wei Zheng; Chun Hu Cheng; Shih An Wang; Chun Yen Chang

doi:10.1016/j.vacuum.2019.04.045

Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

Tun Jen Chang, Chien Liu, Chia Chi Fan, Hsiao Hsuan Hsu, Hsuan Han Chen, Wan Hsin Chen, Yu Chi Fan, Tsung Ming Lee, Chien Liang Lin, Jun Ma, Zhi Wei Zheng, Chun Hu Cheng^*, Shih An Wang, Chun Yen Chang

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

12 引文斯高帕斯（Scopus）

摘要

In this work, we successfully demonstrated the 9.6-nm-thick HfAlO_x ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrO_x film with zirconium diffusion issue, the HfAlO_x film showed excellent thermal stability under high temperature annealing. Besides, the ferroelectric HfAlO_x also exhibited robust polarization characteristics under endurance cycling test. A >10⁶ stressed cycles with 4 MV/cm can be measured and a long endurance was sustained over 5 × 10⁷ cycles under 3.6 MV/cm. Therefore, the HfAlO_x film showed the great promise for integrating in high performance ferroelectric memory with thermal budget concerns.

原文	英語
頁（從 - 到）	11-14
頁數	4
期刊	Vacuum
卷	166
DOIs	https://doi.org/10.1016/j.vacuum.2019.04.045
出版狀態	已發佈 - 2019 8月

ASJC Scopus subject areas

儀器
凝聚態物理學
表面、塗料和薄膜

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10.1016/j.vacuum.2019.04.045

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引用此

@article{7a164fa4704242f483e94b1ec8c1d409,

title = "Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides",

abstract = "In this work, we successfully demonstrated the 9.6-nm-thick HfAlOx ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrOx film with zirconium diffusion issue, the HfAlOx film showed excellent thermal stability under high temperature annealing. Besides, the ferroelectric HfAlOx also exhibited robust polarization characteristics under endurance cycling test. A >106 stressed cycles with 4 MV/cm can be measured and a long endurance was sustained over 5 × 107 cycles under 3.6 MV/cm. Therefore, the HfAlOx film showed the great promise for integrating in high performance ferroelectric memory with thermal budget concerns.",

keywords = "Domain pinning, Endurance cycling, Ferroelectric, HfAlO, Thermal stability",

author = "Chang, {Tun Jen} and Chien Liu and Fan, {Chia Chi} and Hsu, {Hsiao Hsuan} and Chen, {Hsuan Han} and Chen, {Wan Hsin} and Fan, {Yu Chi} and Lee, {Tsung Ming} and Lin, {Chien Liang} and Jun Ma and Zheng, {Zhi Wei} and Cheng, {Chun Hu} and Wang, {Shih An} and Chang, {Chun Yen}",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = aug,

doi = "10.1016/j.vacuum.2019.04.045",

language = "English",

volume = "166",

pages = "11--14",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

AU - Chang, Tun Jen

AU - Liu, Chien

AU - Fan, Chia Chi

AU - Hsu, Hsiao Hsuan

AU - Chen, Hsuan Han

AU - Chen, Wan Hsin

AU - Fan, Yu Chi

AU - Lee, Tsung Ming

AU - Lin, Chien Liang

AU - Ma, Jun

AU - Zheng, Zhi Wei

AU - Cheng, Chun Hu

AU - Wang, Shih An

AU - Chang, Chun Yen

PY - 2019/8

Y1 - 2019/8

N2 - In this work, we successfully demonstrated the 9.6-nm-thick HfAlOx ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrOx film with zirconium diffusion issue, the HfAlOx film showed excellent thermal stability under high temperature annealing. Besides, the ferroelectric HfAlOx also exhibited robust polarization characteristics under endurance cycling test. A >106 stressed cycles with 4 MV/cm can be measured and a long endurance was sustained over 5 × 107 cycles under 3.6 MV/cm. Therefore, the HfAlOx film showed the great promise for integrating in high performance ferroelectric memory with thermal budget concerns.

AB - In this work, we successfully demonstrated the 9.6-nm-thick HfAlOx ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrOx film with zirconium diffusion issue, the HfAlOx film showed excellent thermal stability under high temperature annealing. Besides, the ferroelectric HfAlOx also exhibited robust polarization characteristics under endurance cycling test. A >106 stressed cycles with 4 MV/cm can be measured and a long endurance was sustained over 5 × 107 cycles under 3.6 MV/cm. Therefore, the HfAlOx film showed the great promise for integrating in high performance ferroelectric memory with thermal budget concerns.

KW - Domain pinning

KW - Endurance cycling

KW - Ferroelectric

KW - HfAlO

KW - Thermal stability

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DO - 10.1016/j.vacuum.2019.04.045

M3 - Article

AN - SCOPUS:85064821625

SN - 0042-207X

VL - 166

SP - 11

EP - 14

JO - Vacuum

JF - Vacuum

ER -

Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

摘要

ASJC Scopus subject areas

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