Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

Tun Jen Chang, Chien Liu, Chia Chi Fan, Hsiao Hsuan Hsu, Hsuan Han Chen, Wan Hsin Chen, Yu Chi Fan, Tsung Ming Lee, Chien Liang Lin, Jun Ma, Zhi Wei Zheng, Chun Hu Cheng, Shih An Wang, Chun Yen Chang

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this work, we successfully demonstrated the 9.6-nm-thick HfAlOx ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrOx film with zirconium diffusion issue, the HfAlOx film showed excellent thermal stability under high temperature annealing. Besides, the ferroelectric HfAlOx also exhibited robust polarization characteristics under endurance cycling test. A >106 stressed cycles with 4 MV/cm can be measured and a long endurance was sustained over 5 × 107 cycles under 3.6 MV/cm. Therefore, the HfAlOx film showed the great promise for integrating in high performance ferroelectric memory with thermal budget concerns.

原文英語
頁(從 - 到)11-14
頁數4
期刊Vacuum
166
DOIs
出版狀態已發佈 - 2019 八月

ASJC Scopus subject areas

  • 儀器
  • 凝聚態物理學
  • 表面、塗料和薄膜

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