Investigation on Channel Plasma Effect in Doped Tin-Oxide Thin-Film Transistors Using Experiments and Simulation

Zong Wei Shang, Qian Xu, Guan You He, Zhi Wei Zheng, Chun Hu Cheng

研究成果: 書貢獻/報告類型會議論文篇章

摘要

In this paper, we reported ap-channel tin-oxide (SnO) thin-film transistor (TFT) by introducing aluminum (AI) dopant in the SnO channel layer. An extremely high field-effect mobility (\mu_{\text{FE}}) of 8 cm2/V·s and an on-to-off current ratio (I_{\text{on}}/I_{\text{off}}) of 103 were obtained in this p-channel Al-doped SnO (A1:SnO) TFT. Furthermore, the device performances of the Al:SnO TFT including the I_{\text{on}}/I_{\text{off}} and subthreshold swing (SS) were greatly improved by fluorine plasma treatment (FPT) on the Al:SnO channel layer. In addition, in order to study the channel plasma effect on the device performances, TCAD simulation was carried out based on the p-channel Al:SnO TFT by introducing the density of state (DOS) model. The simulation results indicated that the device performance enhancements were further achieved because the attributes of acceptor-like Gaussian defect states and donor-like band-tail state were modified during the FPT.

原文英語
主出版物標題China Semiconductor Technology International Conference 2021, CSTIC 2021
編輯Cor Claeys, Steve X. Liang, Qinghuang Lin, Ru Huang, Hanming Wu, Peilin Song, Linyong Pang, Ying Zhang, Beichao Zhang, Xinping Xinping Qu, Cheng Zhuo, Hsiang-Lan Lung
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665449458
DOIs
出版狀態已發佈 - 2021 三月 14
事件2021 China Semiconductor Technology International Conference, CSTIC 2021 - Shanghai, 中国
持續時間: 2021 三月 142021 三月 15

出版系列

名字China Semiconductor Technology International Conference 2021, CSTIC 2021

會議

會議2021 China Semiconductor Technology International Conference, CSTIC 2021
國家/地區中国
城市Shanghai
期間2021/03/142021/03/15

ASJC Scopus subject areas

  • 硬體和架構
  • 電氣與電子工程
  • 電子、光磁材料

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