Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode

Yu Chien Chiu, Chun Hu Cheng, Chun Yen Chang, Ying Tsan Tang, Min Cheng Chen

研究成果: 雜誌貢獻期刊論文同行評審

26 引文 斯高帕斯(Scopus)

摘要

In this work, we report a ferroelectric memory with strained-gate engineering. The memory window of the high strain case was improved by ∼71% at the same ferroelectric thickness. The orthorhombic phase transition (from ferroelectric to anti-ferroelectric transition) plays a key role in realizing negative capacitance effect at high gate electric field. Based on a reliable first principles calculation, we clarify that the gate strain accelerates the phase transformation from metastable monoclinic to orthorhombic and thus largely enhances the ferroelectric polarization without increasing dielectric thickness. This ferroelectric strain technology shows the potential for emerging device application. (Figure presented.).

原文英語
文章編號1600368
期刊Physica Status Solidi - Rapid Research Letters
11
發行號3
DOIs
出版狀態已發佈 - 2017 三月 1

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學

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