Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides

Chien Liu, Chia Chi Fan, Chih Yang Tseng, Hsiao Hsuan Hsu, Chun Hu Cheng, Yen Liang Chen, Chun Yen Chang, Wu Ching Chou, Chien Liang Lin, Yu Chi Fan, Tsung Ming Lee

研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)

摘要

In this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAlO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAlO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.

原文英語
主出版物標題2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
編輯Ting-Ao Tang, Fan Ye, Yu-Long Jiang
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781538644409
DOIs
出版狀態已發佈 - 2018 十二月 5
事件14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, 中国
持續時間: 2018 十月 312018 十一月 3

出版系列

名字2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

其他

其他14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
國家/地區中国
城市Qingdao
期間2018/10/312018/11/03

ASJC Scopus subject areas

  • 電氣與電子工程

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