@inproceedings{984afaaacda54f889f3721a47abd4198,
title = "Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer",
abstract = "In this paper, the ferroelectric polarization effect of ZrO capping layer on HfO MFM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO film can be induced by a thin ZrO capping layer. The thickness of ZrO capping layer plays an important role in the ferroelectric polarization of HfO MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO/HfO film shows the advantage for suppressing the leakage issue during hightemperature ferroelectric phase transition.",
keywords = "Ferroelectricity, Hafnium oxide, Phase transition, Zirconium oxide",
author = "Liu, {Kuan Wei} and Chen, {Hsuan Han} and Huang, {Zhong Ying} and Wang, {Wei Chun} and Fan, {Yu Chi} and Lin, {Ching Liang} and Hsu, {Chih Chieh} and Fan, {Chia Chi} and Hsu, {Hsiao Hsuan} and Chang, {Chun Yen} and Lin, {Chien Chung} and Cheng, {Chun Hu}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 ; Conference date: 12-06-2019 Through 14-06-2019",
year = "2019",
month = jun,
doi = "10.1109/EDSSC.2019.8754036",
language = "English",
series = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019",
}