Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer

Kuan Wei Liu, Hsuan Han Chen, Zhong Ying Huang, Wei Chun Wang, Yu Chi Fan, Ching Liang Lin, Chih Chieh Hsu, Chia Chi Fan, Hsiao Hsuan Hsu, Chun Yen Chang, Chien Chung Lin, Chun Hu Cheng

研究成果: 書貢獻/報告類型會議貢獻

摘要

In this paper, the ferroelectric polarization effect of ZrO capping layer on HfO MFM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO film can be induced by a thin ZrO capping layer. The thickness of ZrO capping layer plays an important role in the ferroelectric polarization of HfO MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO/HfO film shows the advantage for suppressing the leakage issue during hightemperature ferroelectric phase transition.

原文英語
主出版物標題2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728102863
DOIs
出版狀態已發佈 - 2019 六月
事件2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, 中国
持續時間: 2019 六月 122019 六月 14

出版系列

名字2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

會議

會議2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
國家中国
城市Xi'an
期間19/6/1219/6/14

ASJC Scopus subject areas

  • Signal Processing
  • Electrical and Electronic Engineering
  • Instrumentation

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  • 引用此

    Liu, K. W., Chen, H. H., Huang, Z. Y., Wang, W. C., Fan, Y. C., Lin, C. L., Hsu, C. C., Fan, C. C., Hsu, H. H., Chang, C. Y., Lin, C. C., & Cheng, C. H. (2019). Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer. 於 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 [8754036] (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2019.8754036