Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides

Chun Hu Cheng; Chia Chi Fan; Chien Liu; Hsiao Hsuan Hsu; Hsuan Han Chen; Chih Chieh Hsu; Shih An Wang; Chun Yen Chang

doi:10.1109/TED.2018.2888836

Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides

Chun Hu Cheng^*, Chia Chi Fan, Chien Liu, Hsiao Hsuan Hsu, Hsuan Han Chen, Chih Chieh Hsu, Shih An Wang, Chun Yen Chang

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

19 引文斯高帕斯（Scopus）

摘要

In this paper, we reported a ferroelectric HfAlO _x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO _x transistor with GS engineering percentage of I _ON enhancement and 27% V _T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO _x and stabilizing the NC effect, which shows the potential for the application of advanced technology node.

原文	英語
文章編號	8598996
頁（從 - 到）	1082-1086
頁數	5
期刊	IEEE Transactions on Electron Devices
卷	66
發行號	2
DOIs	https://doi.org/10.1109/TED.2018.2888836
出版狀態	已發佈 - 2019 2月

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/TED.2018.2888836

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引用此

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title = "Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides",

abstract = " In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of I ON enhancement and 27% V T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO x and stabilizing the NC effect, which shows the potential for the application of advanced technology node.",

keywords = "Ferroelectrics, gate stress (GS), negative capacitance (NC)",

author = "Cheng, {Chun Hu} and Fan, {Chia Chi} and Chien Liu and Hsu, {Hsiao Hsuan} and Chen, {Hsuan Han} and Hsu, {Chih Chieh} and Wang, {Shih An} and Chang, {Chun Yen}",

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doi = "10.1109/TED.2018.2888836",

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T1 - Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides

AU - Cheng, Chun Hu

AU - Fan, Chia Chi

AU - Liu, Chien

AU - Hsu, Hsiao Hsuan

AU - Chen, Hsuan Han

AU - Hsu, Chih Chieh

AU - Wang, Shih An

AU - Chang, Chun Yen

PY - 2019/2

Y1 - 2019/2

N2 - In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of I ON enhancement and 27% V T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO x and stabilizing the NC effect, which shows the potential for the application of advanced technology node.

AB - In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of I ON enhancement and 27% V T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO x and stabilizing the NC effect, which shows the potential for the application of advanced technology node.

KW - Ferroelectrics

KW - gate stress (GS)

KW - negative capacitance (NC)

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Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides

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ASJC Scopus subject areas

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