@article{1df184c5fd5f4e1ab395339e62e507cb,
title = "Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides",
abstract = " In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of I ON enhancement and 27% V T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO x and stabilizing the NC effect, which shows the potential for the application of advanced technology node. ",
keywords = "Ferroelectrics, gate stress (GS), negative capacitance (NC)",
author = "Cheng, {Chun Hu} and Fan, {Chia Chi} and Chien Liu and Hsu, {Hsiao Hsuan} and Chen, {Hsuan Han} and Hsu, {Chih Chieh} and Wang, {Shih An} and Chang, {Chun Yen}",
note = "Funding Information: Manuscript received August 11, 2018; revised October 16, 2018, November 11, 2018, and December 17, 2018; accepted December 17, 2018. Date of publication January 1, 2019; date of current version January 22, 2019. This work was supported in part by the National Science Council (NSC) of Taiwan, “Republic of China,” under Contract NSC 106-2628-E-003-001-MY2 and in part by the Ministry of Science and Technology under Grant MOST NSC 106-2628-E-003-001-MY2. The review of this paper was arranged by Editor K. Kalna. (Corresponding author: Chun-Hu Cheng.) C.-H. Cheng and S.-A. Wang are with the Department of Mechatronic Engineering, National Taiwan Normal University, Taipei 10610, Taiwan (e-mail: chcheng@ntnu.edu.tw). Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2019",
month = feb,
doi = "10.1109/TED.2018.2888836",
language = "English",
volume = "66",
pages = "1082--1086",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}