Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides

Chun Hu Cheng, Chia Chi Fan, Chien Liu, Hsiao Hsuan Hsu, Hsuan Han Chen, Chih Chieh Hsu, Shih An Wang, Chun Yen Chang

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of I ON enhancement and 27% V T reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO x and stabilizing the NC effect, which shows the potential for the application of advanced technology node.

原文英語
文章編號8598996
頁(從 - 到)1082-1086
頁數5
期刊IEEE Transactions on Electron Devices
66
發行號2
DOIs
出版狀態已發佈 - 2019 二月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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