Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric

M. H. Lin, Y. C. Lin, Y. S. Lin, W. J. Sun, S. H. Chen, Y. C. Chiu, C. H. Cheng, C. Y. Chang

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

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Chemical Compounds

Engineering & Materials Science