Interference of charge carrier in a double-dot nanopillar transistor

Yue Min Wan; Hsien Hsun Yang; Chin Lung Sung; Shu Fen Hu

doi:10.1063/1.2240531

Interference of charge carrier in a double-dot nanopillar transistor

Yue Min Wan^*
, Hsien Hsun Yang
, Chin Lung Sung
, Shu Fen Hu

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λ_F, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.

原文	英語
文章編號	053515
期刊	Applied Physics Letters
卷	89
發行號	5
DOIs	https://doi.org/10.1063/1.2240531
出版狀態	已發佈 - 2006
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.2240531

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title = "Interference of charge carrier in a double-dot nanopillar transistor",

abstract = "In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.",

author = "Wan, \{Yue Min\} and Yang, \{Hsien Hsun\} and Sung, \{Chin Lung\} and Hu, \{Shu Fen\}",

note = "Funding Information: The authors thank Professor J. S. Yang (National Taiwan Ocean University) for many valuable comments and the research staff in the National Nano Device Laboratories for experimental assist. This work was financially supported by the National Science Council of Taiwan, Republic of China under Contract Nos. NSC94-2119-M-214-001, NSC93-2112-M-492-002, NSC94-2112-M-492-003, NDL-93S-C075, and ISU94-01-06.",

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AU - Sung, Chin Lung

AU - Hu, Shu Fen

N1 - Funding Information: The authors thank Professor J. S. Yang (National Taiwan Ocean University) for many valuable comments and the research staff in the National Nano Device Laboratories for experimental assist. This work was financially supported by the National Science Council of Taiwan, Republic of China under Contract Nos. NSC94-2119-M-214-001, NSC93-2112-M-492-002, NSC94-2112-M-492-003, NDL-93S-C075, and ISU94-01-06.

PY - 2006

Y1 - 2006

N2 - In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.

AB - In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-voltage (I-V) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.

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Interference of charge carrier in a double-dot nanopillar transistor

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