Interfacial-Layer-Free Ge_0.95Si_0.05Nanosheet FeFETs

The substantial memory window (MW) of 1.8 V is achieved by utilizing stacked two nanosheet (NS) gate-all-around (GAA) Ge0.95 Si0.05 ferroelectric field-effect transistors (FeFETs), employing a low write voltage of 2 V. The channel phosphorus concentration 1E18 cm-3 is used to erase the absence of interfacial layer (IL) can reduce the operation voltage. An isotropic wet etching process is employed for channel release. The stacked two NSs offer the advantages of reducing cell-to-cell variation and doubling the read current. Additionally, the stability of data storage is demonstrated with the data retention of >1E4 s, linearly extrapolated to a span of 10 years, and exhibiting high endurance >1E11 cycles. The thermal budget is as low as 400 °C.