Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array

H. L. Chiang; J. F. Wang; K. H. Lin; C. H. Nien; J. J. Wu; K. Y. Hsiang; C. P. Chuu; Y. W. Chen; X. W. Zhang; C. W. Liu; Tahui Wang; C. C. Wang; M. H. Lee; M. F. Chang; C. S. Chang; T. C. Chen

doi:10.1109/VLSITechnologyandCir46769.2022.9830462

Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array

H. L. Chiang
, J. F. Wang
, K. H. Lin
, C. H. Nien
, J. J. Wu
, K. Y. Hsiang
, C. P. Chuu
, Y. W. Chen
, X. W. Zhang
, C. W. Liu
, Tahui Wang
, C. C. Wang
, M. H. Lee
, M. F. Chang
, C. S. Chang
, T. C. Chen^*

^*此作品的通信作者

光電工程研究所暨學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

4 引文斯高帕斯（Scopus）

摘要

For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.

原文	英語
主出版物標題	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	361-362
頁數	2
ISBN（電子）	9781665497725
DOIs	https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830462
出版狀態	已發佈 - 2022
事件	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, 美国持續時間: 2022 6月 12 → 2022 6月 17

出版系列

名字	Digest of Technical Papers - Symposium on VLSI Technology
卷	2022-June
ISSN（列印）	0743-1562

會議

會議	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
國家/地區	美国
城市	Honolulu
期間	2022/06/12 → 2022/06/17

ASJC Scopus subject areas

電氣與電子工程

存取文件

10.1109/VLSITechnologyandCir46769.2022.9830462

其它文件與鏈接

引用此

Chiang, H. L., Wang, J. F., Lin, K. H., Nien, C. H., Wu, J. J., Hsiang, K. Y., Chuu, C. P., Chen, Y. W., Zhang, X. W., Liu, C. W., Wang, T., Wang, C. C., Lee, M. H., Chang, M. F., Chang, C. S., & Chen, T. C. (2022). Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array. 於 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 (頁 361-362). (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2022-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830462

Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array. / Chiang, H. L.; Wang, J. F.; Lin, K. H. 等.
2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 361-362 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2022-June).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Chiang, HL, Wang, JF, Lin, KH, Nien, CH, Wu, JJ, Hsiang, KY, Chuu, CP, Chen, YW, Zhang, XW, Liu, CW, Wang, T, Wang, CC, Lee, MH, Chang, MF, Chang, CS & Chen, TC 2022, Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array. 於 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Digest of Technical Papers - Symposium on VLSI Technology, 卷 2022-June, Institute of Electrical and Electronics Engineers Inc., 頁 361-362, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, Honolulu, 美国, 2022/06/12. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830462

Chiang HL, Wang JF, Lin KH, Nien CH, Wu JJ, Hsiang KY 等. Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array. 於 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 361-362. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnologyandCir46769.2022.9830462

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title = "Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array",

abstract = "For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.",

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AU - Wang, J. F.

AU - Lin, K. H.

AU - Nien, C. H.

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AU - Hsiang, K. Y.

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AU - Zhang, X. W.

AU - Liu, C. W.

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AU - Wang, C. C.

AU - Lee, M. H.

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AB - For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.

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