Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array

H. L. Chiang, J. F. Wang, K. H. Lin, C. H. Nien, J. J. Wu, K. Y. Hsiang, C. P. Chuu, Y. W. Chen, X. W. Zhang, C. W. Liu, Tahui Wang, C. C. Wang, M. H. Lee, M. F. Chang, C. S. Chang, T. C. Chen*

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.

原文英語
主出版物標題2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面361-362
頁數2
ISBN(電子)9781665497725
DOIs
出版狀態已發佈 - 2022
事件2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, 美国
持續時間: 2022 6月 122022 6月 17

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2022-June
ISSN(列印)0743-1562

會議

會議2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
國家/地區美国
城市Honolulu
期間2022/06/122022/06/17

ASJC Scopus subject areas

  • 電氣與電子工程

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