@inproceedings{3937abc36618448dbe3a3e31a0589404,
title = "Interfacial characterization of ceo2-gatcd MOSFETs using gated-diode method and charge pumping technique",
abstract = "Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating CeCO2 dielectrics were fabricated and investigated. In this work, the interfacial and electrical properties of CeCO2/Si were characterized by gated-diode method and charge pumping technique. The lowest density of interface traps per area and energy (Dit) of CeO2/Si interface in comparison with other high-K material is about 7.3×10 10 cm-2-eV-1 due to the very low lattice mismatch at CeCO2/Si interface. The density of interface trap per area (Nit) determined using gated diode method is 6×10 9 cm-2. The minority carrier lifetime (τ fIJ), the effective capture cross section of surface state (σs) and surface recombination velocity (so) extracted using gated-diode method are 4.09×10-8 s, 7.14×10-14 cm2 and 4310 cm/s, respectively. Furthermore, a comparison with MOSFETs using the other high-K materials as gate dielectrics was also made.",
author = "Chm, \{F. C.\} and Chen, \{H. W.\} and Chen, \{C. H.\} and Liu, \{C. H.\} and Chen, \{S. Y.\} and Huang, \{B. S.\} and Hsieh, \{Z. Y.\} and Huang, \{H. S.\} and Hwang, \{H. L.\}",
year = "2009",
doi = "10.1149/1.2981623",
language = "English",
isbn = "9781566776516",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "423--432",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6",
edition = "5",
note = "Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 15-10-2008",
}