Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating CeCO2 dielectrics were fabricated and investigated. In this work, the interfacial and electrical properties of CeCO2/Si were characterized by gated-diode method and charge pumping technique. The lowest density of interface traps per area and energy (Dit) of CeO2/Si interface in comparison with other high-K material is about 7.3×10 10 cm-2-eV-1 due to the very low lattice mismatch at CeCO2/Si interface. The density of interface trap per area (Nit) determined using gated diode method is 6×10 9 cm-2. The minority carrier lifetime (τ fIJ), the effective capture cross section of surface state (σs) and surface recombination velocity (so) extracted using gated-diode method are 4.09×10-8 s, 7.14×10-14 cm2 and 4310 cm/s, respectively. Furthermore, a comparison with MOSFETs using the other high-K materials as gate dielectrics was also made.