Interfacial characterization of ceo2-gatcd MOSFETs using gated-diode method and charge pumping technique

F. C. Chm, H. W. Chen, C. H. Chen, C. H. Liu, S. Y. Chen, B. S. Huang, Z. Y. Hsieh, H. S. Huang, H. L. Hwang

研究成果: 書貢獻/報告類型會議論文篇章

摘要

Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating CeCO2 dielectrics were fabricated and investigated. In this work, the interfacial and electrical properties of CeCO2/Si were characterized by gated-diode method and charge pumping technique. The lowest density of interface traps per area and energy (Dit) of CeO2/Si interface in comparison with other high-K material is about 7.3×10 10 cm-2-eV-1 due to the very low lattice mismatch at CeCO2/Si interface. The density of interface trap per area (Nit) determined using gated diode method is 6×10 9 cm-2. The minority carrier lifetime (τ fIJ), the effective capture cross section of surface state (σs) and surface recombination velocity (so) extracted using gated-diode method are 4.09×10-8 s, 7.14×10-14 cm2 and 4310 cm/s, respectively. Furthermore, a comparison with MOSFETs using the other high-K materials as gate dielectrics was also made.

原文英語
主出版物標題ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
發行者Electrochemical Society Inc.
頁面423-432
頁數10
版本5
ISBN(列印)9781566776516
DOIs
出版狀態已發佈 - 2009
事件Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, 美国
持續時間: 2008 十月 132008 十月 15

出版系列

名字ECS Transactions
號碼5
16
ISSN(列印)1938-5862
ISSN(電子)1938-6737

其他

其他Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
國家/地區美国
城市Honolulu, HI
期間2008/10/132008/10/15

ASJC Scopus subject areas

  • 工程 (全部)

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