@inproceedings{e1791611d8d349e09b5629804cad1fcc,
title = "Interfacial and electrical characterization of hfo2-gated MOSCs and MOSFETs by C-V and gated-diode method",
abstract = "Metal-oxide-semiconductor capacitors (MOSCs) and Metal-oxidesemiconductor field-effect transistors (MOSFETs) incorporating hafnium dioxide (HfO 2) dielectrics were fabricated and investigated. The electrical and interfacial properties were characterized including C-V, Ids-V gs, the mean density of interface traps per unit area and energy ({\=D}it,), energy of interface traps density distribution, interface traps density (Nit), density of near-interface oxide traps per unit area (Nniot), effective capture cross-section area (σs,), minority carrier lifetime (τfij) and surface recombination velocity (so) were studied. Furthermore, a comparison with MOSFETs using conventional SiO2 as gate dielectrics was also made.",
author = "Chen, {S. Y.} and Chen, {H. W.} and Chen, {C. H.} and Chiu, {F. C.} and Liu, {C. H.} and Hsieh, {Z. Y.} and Huang, {H. S.} and Hwang, {H. L.}",
year = "2009",
doi = "10.1149/1.2981594",
language = "English",
isbn = "9781566776516",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "131--138",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6",
edition = "5",
note = "Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 15-10-2008",
}