Interfacial and electrical characterization of hfo2-gated MOSCs and MOSFETs by C-V and gated-diode method

S. Y. Chen, H. W. Chen, C. H. Chen, F. C. Chiu, C. H. Liu, Z. Y. Hsieh, H. S. Huang, H. L. Hwang

研究成果: 書貢獻/報告類型會議論文篇章

6 引文 斯高帕斯(Scopus)

摘要

Metal-oxide-semiconductor capacitors (MOSCs) and Metal-oxidesemiconductor field-effect transistors (MOSFETs) incorporating hafnium dioxide (HfO 2) dielectrics were fabricated and investigated. The electrical and interfacial properties were characterized including C-V, Ids-V gs, the mean density of interface traps per unit area and energy (D̄it,), energy of interface traps density distribution, interface traps density (Nit), density of near-interface oxide traps per unit area (Nniot), effective capture cross-section area (σs,), minority carrier lifetime (τfij) and surface recombination velocity (so) were studied. Furthermore, a comparison with MOSFETs using conventional SiO2 as gate dielectrics was also made.

原文英語
主出版物標題ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
發行者Electrochemical Society Inc.
頁面131-138
頁數8
版本5
ISBN(列印)9781566776516
DOIs
出版狀態已發佈 - 2009
事件Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, 美国
持續時間: 2008 十月 132008 十月 15

出版系列

名字ECS Transactions
號碼5
16
ISSN(列印)1938-5862
ISSN(電子)1938-6737

其他

其他Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
國家/地區美国
城市Honolulu, HI
期間2008/10/132008/10/15

ASJC Scopus subject areas

  • 工程 (全部)

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