@inproceedings{1fd03e479b47421e9ff550f23405b282,
title = "Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope",
abstract = "A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.",
keywords = "Clocks, Fluctuations, High K dielectric materials, Logic gates, Switches, Transistors",
author = "Chiu, {Yu Chien} and Cheng, {Chun Hu} and Fan, {Chia Chi} and Chen, {Po Chun} and Chang, {Chun Yen} and Lee, {Min Hung} and Chien Liu and Yen, {Shiang Shiou} and Hsu, {Hsiao Hsuan}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",
year = "2015",
month = aug,
day = "3",
doi = "10.1109/DRC.2015.7175543",
language = "English",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "41--42",
booktitle = "73rd Annual Device Research Conference, DRC 2015",
}