Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Yu Chien Chiu, Chun-Hu Cheng, Chia Chi Fan, Po Chun Chen, Chun Yen Chang, Min-Hung Lee, Chien Liu, Shiang Shiou Yen, Hsiao Hsuan Hsu

研究成果: 書貢獻/報告類型會議論文篇章

摘要

A nearly ideal subthreshold slope (SSmin ∼58mV/dec) and an ultralow off-state current of 10-14A/μm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔVT window during endurance cycling may be affected by interface polarization fluctuation.

原文英語
主出版物標題73rd Annual Device Research Conference, DRC 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面41-42
頁數2
ISBN(電子)9781467381345
DOIs
出版狀態已發佈 - 2015 八月 3
事件73rd Annual Device Research Conference, DRC 2015 - Columbus, 美国
持續時間: 2015 六月 212015 六月 24

出版系列

名字Device Research Conference - Conference Digest, DRC
2015-August
ISSN(列印)1548-3770

其他

其他73rd Annual Device Research Conference, DRC 2015
國家/地區美国
城市Columbus
期間2015/06/212015/06/24

ASJC Scopus subject areas

  • 電氣與電子工程

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