Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement

Chia Chi Fan, Chun Yuan Tu, Ming Huei Lin, Chun Yen Chang, Chun Hu Cheng, Yen Liang Chen, Guan Lin Liou, Chien Liu, Wu Ching Chou, Hsiao Hsuan Hsu

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

摘要

In this work, we successfully achieve a hysteresis-free negative capacitance field effect transistors (NCFETs) by exploiting a defect passivation scheme. This research work simultaneously provides a new insight into the gate-oxide stress reliability of NCFET. The fluorine-passivated HfAlOx NCFET shows the excellent transistor characteristics including a steep subthreshold swing of sub-30-mV/dec, a negligible hysteresis-free switch of ∼10mV and a large on/off current reatio (Ion/Ioff) of >107. Most importantly, fluorine passivation for NC HfAlOx effectively suppress the generation of shallow traps during electrical stress test. Besides, it is favorable to maintain NC operation and SILC immunity by in-situ fluorine passivation, which has been verified by transient pulse I-V measurement.

原文英語
主出版物標題2018 IEEE International Reliability Physics Symposium, IRPS 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面PTX.81-PTX.85
ISBN(電子)9781538654798
DOIs
出版狀態已發佈 - 2018 五月 25
事件2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, 美国
持續時間: 2018 三月 112018 三月 15

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2018-March
ISSN(列印)1541-7026

其他

其他2018 IEEE International Reliability Physics Symposium, IRPS 2018
國家美国
城市Burlingame
期間18/3/1118/3/15

ASJC Scopus subject areas

  • Engineering(all)

指紋 深入研究「Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement」主題。共同形成了獨特的指紋。

  • 引用此

    Fan, C. C., Tu, C. Y., Lin, M. H., Chang, C. Y., Cheng, C. H., Chen, Y. L., Liou, G. L., Liu, C., Chou, W. C., & Hsu, H. H. (2018). Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement. 於 2018 IEEE International Reliability Physics Symposium, IRPS 2018 (頁 PTX.81-PTX.85). (IEEE International Reliability Physics Symposium Proceedings; 卷 2018-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2018.8353703